10 pcs : IR35412MTRPBFAUMA1 - Gate Drivers IFX POWERSTAGE/DRIVER

      10(electronicparts)726IR35412MTRPBFAUM
      10 pcs : IR35412MTRPBFAUMA1 - Gate Drivers IFX POWERSTAGE/DRIVER
      £64.50
      Delivery: 7-10 business days
      Quantity
      10 Items

      Description
      IR3541x 25V Integrated Power Stages Infineon Technologies IR3541x 25V Integrated Power Stages combine the most advanced low voltage MOSFET technologies and integrate them into a multichip PQFN package. This helps in designing a best-in-class efficiency device for managing processor power. These power stages are available in industry-standard 5 x 6 footprints and various current ratings that cover high-end and price-performance customer requirements. The IR3541x power stages feature highly accurate current reporting, programmable constant current limit, and fast switching technology for improved performance at higher frequencies. These power stages offer >,95% peak efficiency and 2.5mA ICC with low IQ (<,200µA) disable PS4 (deep sleep mode) capability. Typical applications include server and storage, telecom, and datacom.
      Product Details
      10(electronicparts)726IR35412MTRPBFAUM
      IR35412MTRPBFAUMA1
      10 Items

      Data sheet

      Manufacturer
      Infineon
      Maximum Operating Temperature
      + 85 C
      Minimum Operating Temperature
      - 20 C
      Mounting Style
      SMD/SMT
      Output Current
      50 A
      Product Type
      Gate Drivers
      Package/Case
      VFQFN-40
      Product Category
      Gate Drivers
      Packaging
      Cut Tape
      RoHS
      Details
      Supply Voltage - Min
      4.25 V
      Supply Voltage - Max
      16 V
      Brand
      Infineon Technologies
      Moisture Sensitive
      Yes
      Product
      IGBT, MOSFET Gate Drivers
      Factory Pack Quantity Factory Pack Quantity
      5000
      Subcategory
      PMIC - Power Management ICs
      Part # Aliases
      IR35412MTRPBF SP001665582
      Pd - Power Dissipation
      -
      Operating Supply Current
      2.5 mA