20 pcs - 2ED2108S06FXUMA1 Infineon 2ED2108S06FXUMA1, -414.2 mA, 650V 8-Pin, DSO-8

The Infineon 650 V half-bridge gate driver with integrated bootstrap diode has unique Infineon Thin-Film-Silicon on Insulator (SOI)-Technology and Interlocking function with internal 540 ns dead time and programmable up to 5 us with external resistor. The High and Low Voltage Pins Separated for Maximum Creepage and Clearance (2ED21084S06J version) and has separate logic and power ground with the 2ED21084S06J version.Negative VS transient immunity of 100 VFloating channel designed for bootstrap operationIntegrated ultra-fast, low resistance bootstrap diodeSchmitt trigger inputs with hysteresisDual package options of DSO-8 and DSO-14