1 pcs : MAX22702EASA+ - Gate Drivers Ultra-High CMTI Silicon-Carbide (SiC) ga
    • 1 pcs : MAX22702EASA+ - Gate Drivers Ultra-High CMTI Silicon-Carbide (SiC) ga

    1 pcs : MAX22702EASA+ - Gate Drivers Ultra-High CMTI Silicon-Carbide (SiC) ga

    electronicparts-UK/M/700-MAX22702EASA+
    £13.36
    Delivery: 7-10 business days
    Quantity
    10 Items

    Description
    MAX22700-MAX22702 Isolated Gate Drivers Analog Devices Inc. MAX22700-MAX22702 Isolated Gate Drivers are a family of single-channel isolated gate drivers with ultra-high common-mode transient immunity (CMTI) of 300kV/μs (typical). The devices are designed to drive silicon-carbide (SiC) or gallium-nitride (GaN) transistors in various inverter or motor control applications. All devices have integrated digital galvanic isolation using Maxim’s proprietary process technology. The drivers feature variants with output options for gate driver common pin GNDB (MAX22700), Miller Clamp (MAX22701), and an adjustable under-voltage-lockout UVLO (MAX22702). Also, variants are offered as differential (D versions) or single-ended (E versions) inputs. These devices transfer digital signals between circuits with different power domains. All of the devices in the family feature isolation for a withstand voltage rating of 3kVRMS for 60 seconds.
    Product Details
    electronicparts-UK/M/700-MAX22702EASA+
    MAX22702EASA+
    10 Items

    Data sheet

    Manufacturer
    Analog Devices Inc.
    Series
    MAX22702
    Maximum Operating Temperature
    + 125 C
    Minimum Operating Temperature
    - 40 C
    Mounting Style
    SMD/SMT
    Type
    High-Side, Low-Side
    Output Current
    100 mA
    Product Type
    Gate Drivers
    Product Category
    Gate Drivers
    Packaging
    Tray
    RoHS
    Details
    Supply Voltage - Max
    28 V
    Brand
    Analog Devices / Maxim Integrated
    Factory Pack Quantity Factory Pack Quantity
    100
    Subcategory
    PMIC - Power Management ICs
    Pd - Power Dissipation
    750.89 mW
    Operating Supply Current
    6 mA