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    1 pcs : LMG3411R150RWHT - Gate Drivers 600-V 150-m? GaN with integrated driver and cycle-by-cycle overcurrent protection 32-VQFN
    • 1 pcs : LMG3411R150RWHT - Gate Drivers 600-V 150-m? GaN with integrated driver and cycle-by-cycle overcurrent protection 32-VQFN

    1 pcs : LMG3411R150RWHT - Gate Drivers 600-V 150-m? GaN with integrated driver and cycle-by-cycle overcurrent protection 32-VQFN

    electronicparts-UK/M/595-LMG3411R150RWHT
    £32.64
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    LMG341xR150 GaN FET Texas Instruments LMG341xR150 GaN FET with integrated driver and protection allows designers to achieve new levels of power density and efficiency in power electronics systems. The LMG341xR150 GaN FET features ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI. The features allow dense and efficient topologies like the totem-pole PFC.
    Product Details
    TEXAS INSTRUMENTS
    electronicparts-UK/M/595-LMG3411R150RWHT
    LMG3411R150RWHT
    10 Items

    Data sheet

    Manufacturer
    TEXAS INSTRUMENTS
    Series
    LMG3411R150
    Maximum Operating Temperature
    + 125 C
    Minimum Operating Temperature
    - 40 C
    Mounting Style
    SMD/SMT
    Product Type
    Gate Drivers
    Package/Case
    VQFN-32
    Product Category
    Gate Drivers
    Packaging
    Cut Tape
    RoHS
    Details
    Supply Voltage - Min
    9.5 V
    Supply Voltage - Max
    18 V
    Brand
    Texas Instruments
    Moisture Sensitive
    Yes
    Product
    MOSFET Gate Drivers
    Factory Pack Quantity Factory Pack Quantity
    250
    Subcategory
    PMIC - Power Management ICs
    Tradename
    GaN