1 pcs : LMG1210RVRT - Gate Drivers 1.5-A, 3-A, 200-V half bridge gate driver, 5-V UVLO and programmable dead-time for GaNFET and

LMG1210 200V Half-Bridge MOSFET & GaN FET Drivers Texas Instruments LMG1210 200V Half-Bridge MOSFET and Gallium Nitride Field Effect Transistor (GaN FET) Drivers are designed for ultra-high frequency and high-efficiency applications. The device is ideal for applications with adjustable deadtime capability, very small propagation delay, and 3.4ns high-side low-side matching to optimize system efficiency. The LMG1210 MOSFET and GaN FET Drivers offer an internal LDO, which ensures a gate-drive voltage of 5V regardless of the supply voltage.