1 pcs : 2EDL05I06PF - Gate Drivers 600V half-bridge 0.7A,integrated BSD
    • 1 pcs : 2EDL05I06PF - Gate Drivers 600V half-bridge 0.7A,integrated BSD

    1 pcs : 2EDL05I06PF - Gate Drivers 600V half-bridge 0.7A,integrated BSD

    Allparts-UK/M/726-2EDL05I06PF
    £9.32
    Delivery: 7-10 business days
    Quantity
    10 Items

    Description
    Silicon-on-Insulator (SOI) Gate Driver ICs Infineon Silicon-on-Insulator (SOI) Gate Driver ICs are level-shift high voltage gate driver ICs for IGBTs and MOSFETs. The SOI technology is a high-voltage, level-shift technology providing unique, measurable, and best-in-class advantages. These include integrated bootstrap-diode (BSD) and industry best-in-class robustness to protect against negative transient voltage spikes. Each transistor is isolated by buried silicon dioxide, which eliminates the parasitic bipolar transistors that are causing latch-up. This technology can also lower the level-shift power losses to minimize device-switching power dissipation. The advanced process allows monolithic high-voltage and low-voltage circuitry construction with technology-enhanced benefits.
    Product Details
    Allparts-UK/M/726-2EDL05I06PF
    2EDL05I06PF
    10 Items

    Data sheet

    Manufacturer
    Infineon
    Series
    Infineon SOI
    Maximum Operating Temperature
    + 105 C
    Minimum Operating Temperature
    - 40 C
    Mounting Style
    SMD/SMT
    Type
    Half-Bridge
    Output Current
    500 mA
    Product Type
    Gate Drivers
    Package/Case
    SOIC-8
    Product Category
    Gate Drivers
    Packaging
    Cut Tape
    RoHS
    Details
    Supply Voltage - Min
    10 V
    Supply Voltage - Max
    20 V
    Brand
    Infineon Technologies
    Moisture Sensitive
    Yes
    Product
    IGBT, MOSFET Gate Drivers
    Factory Pack Quantity Factory Pack Quantity
    2500
    Subcategory
    PMIC - Power Management ICs
    Unit Weight
    80.250 mg
    Part # Aliases
    SP001048832 2EDL05I06PFXUMA1
    Pd - Power Dissipation
    600 mW