1 pcs : UCC21710DWR - Galvanically Isolated Gate Drivers 5.7kVrms +/-10A, single-channel-isolated gate driver with OC detection,
    • 1 pcs : UCC21710DWR - Galvanically Isolated Gate Drivers 5.7kVrms +/-10A, single-channel-isolated gate driver with OC detection,

    1 pcs : UCC21710DWR - Galvanically Isolated Gate Drivers 5.7kVrms +/-10A, single-channel-isolated gate driver with OC detection,

    Allparts-UK/M/595-UCC21710DWR
    £18.85
    Delivery: 7-10 business days
    Quantity
    10 Items

    Description
    UCC21710 Isolated Gate Driver Texas Instruments UCC21710 Isolated Gate Driver is a galvanically isolated single-channel gate driver designed to drive up to 1700V SiC MOSFETs and IGBTs. It features advanced integrated protection, best-in-class dynamic performance, and robustness. UCC21710 has up to ±10A peak source and sink current. The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5kVRMS working voltage with longer than 40 years isolation barrier life, 12.8kVPK surge immunity, as well as providing low part-to-part skew, and >,150V/ns common-mode noise immunity (CMTI).
    Product Details
    Allparts-UK/M/595-UCC21710DWR
    UCC21710DWR
    10 Items

    Data sheet

    Manufacturer
    TEXAS INSTRUMENTS
    Series
    UCC21710
    Maximum Operating Temperature
    + 125 C
    Minimum Operating Temperature
    - 40 C
    Mounting Style
    SMD/SMT
    Output Current
    10 A
    Product Type
    Galvanically Isolated Gate Drivers
    Package/Case
    SOIC-16
    Product Category
    Galvanically Isolated Gate Drivers
    Packaging
    MouseReel
    RoHS
    Details
    Supply Voltage - Min
    3 V
    Supply Voltage - Max
    5.5 V
    Brand
    Texas Instruments
    Moisture Sensitive
    Yes
    Product
    Isolated Gate Drivers
    Factory Pack Quantity Factory Pack Quantity
    2000
    Subcategory
    PMIC - Power Management ICs
    Development Kit
    UCC21710QDWEVM-025
    Pd - Power Dissipation
    985 mW
    Operating Supply Current
    61 mA