1 pcs : MB85R256FPFCN-G-BNDE1 - F-RAM 256kbit FRAM, 32kbit x8 parallel, 2.7V 3.6V - TSOP28 Tray
    • 1 pcs : MB85R256FPFCN-G-BNDE1 - F-RAM 256kbit FRAM, 32kbit x8 parallel, 2.7V 3.6V - TSOP28 Tray

    1 pcs : MB85R256FPFCN-G-BNDE1 - F-RAM 256kbit FRAM, 32kbit x8 parallel, 2.7V 3.6V - TSOP28 Tray

    electronicparts-UK/M/249-85256FPFCNGBNDE1
    £19.97
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    FRAM (Ferroelectric Random Access Memory) Fujitsu Semiconductor FRAM (Ferroelectric Random Access Memory) is a non-volatile memory featuring fast writing speed operation, high read/write endurance, and low power consumption. These features make FRAM ideal for applications requiring continuous data logging, real-time recording of three-dimensional position information, and data protection from sudden power outages.
    Product Details
    electronicparts-UK/M/249-85256FPFCNGBNDE1
    MB85R256FPFCN-G-BNDE1
    10 Items

    Data sheet

    Manufacturer
    Kaga FEI
    Maximum Operating Temperature
    + 85 C
    Minimum Operating Temperature
    - 40 C
    Mounting Style
    SMD/SMT
    Product Type
    FRAM
    Interface Type
    Parallel
    Package/Case
    TSOP-28
    Product Category
    F-RAM
    Packaging
    Tray
    RoHS
    Details
    Supply Voltage - Min
    2.7 V
    Supply Voltage - Max
    3.6 V
    Brand
    Fujitsu Semiconductor
    Moisture Sensitive
    Yes
    Operating Supply Voltage
    3.3 V
    Factory Pack Quantity Factory Pack Quantity
    128
    Subcategory
    Memory & Data Storage