1 pcs : NXH003P120M3F2PTHG - Discrete Semiconductor Modules 1200V 3M M3S SIC HALFBRIDGE WITH HPS DBC IN F2 MODULES
    • 1 pcs : NXH003P120M3F2PTHG - Discrete Semiconductor Modules 1200V 3M M3S SIC HALFBRIDGE WITH HPS DBC IN F2 MODULES

    1 pcs : NXH003P120M3F2PTHG - Discrete Semiconductor Modules 1200V 3M M3S SIC HALFBRIDGE WITH HPS DBC IN F2 MODULES

    electronicparts-UK/M/863-H003P120M3F2PTHG
    ONSEMI
    £470.16
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    NXH00xP120M3F2PTxG EliteSiC Half-Bridge Modules onsemi NXH00xP120M3F2PTxG EliteSiC Half-Bridge Modules are 2-pack modules with two 3MΩ or 4mΩ 1200V SIC MOSFET switches and a thermistor with Zirconia Doped Alumina (HPS) Direct Bonded Copper (DBC) or Silicon Nitride (Si3N4) DBC. The F2 packaged SIC MOSFET switches utilise M3S technology and feature a 15V to 18V gate drive range. Applications include DC-AC, DC-DC, and AC-DC conversions.
    Product Details
    ONSEMI
    electronicparts-UK/M/863-H003P120M3F2PTHG
    NXH003P120M3F2PTHG
    10 Items

    Data sheet

    Manufacturer
    ONSEMI
    Series
    NXH003P120M3F2PTHG
    Maximum Operating Temperature
    + 175 C
    Minimum Operating Temperature
    - 40 C
    Mounting Style
    Press Fit
    Type
    SiC M3 MOSFET
    Product Type
    Discrete Semiconductor Modules
    Configuration
    Half Bridge
    Package/Case
    PIM-36
    Product Category
    Discrete Semiconductor Modules
    Packaging
    Tray
    RoHS
    Details
    Brand
    onsemi
    Product
    Silicon Carbide (SiC) Module
    Factory Pack Quantity Factory Pack Quantity
    20
    Subcategory
    Discrete Semiconductor Modules
    Pd - Power Dissipation
    979 W
    Vf - Forward Voltage
    4.8 V
    Typical Turn-Off Delay Time
    144 ns