1 pcs : GCMX080B120S1-E1 - Discrete Semiconductor Modules SiC 1200V 80mO MOSFET SOT-227
    • 1 pcs : GCMX080B120S1-E1 - Discrete Semiconductor Modules SiC 1200V 80mO MOSFET SOT-227

    1 pcs : GCMX080B120S1-E1 - Discrete Semiconductor Modules SiC 1200V 80mO MOSFET SOT-227

    Allparts-UK/M/148-GCMX080B120S1-E1
    SemiQ
    £54.43
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    SiC MOSFET Modules SemiQ SiC MOSFET Modules provide low on-state resistance at high temperatures with excellent switching performance, simplifying power electronic systems' thermal design. The SiC MOSFET Modules operate with zero switching loss to significantly increase efficiency and reducing heat dissipation, allowing smaller heatsinks.
    Product Details
    SemiQ
    Allparts-UK/M/148-GCMX080B120S1-E1
    GCMX080B120S1-E1
    10 Items

    Data sheet

    Manufacturer
    SemiQ
    Maximum Operating Temperature
    + 175 C
    Minimum Operating Temperature
    - 55 C
    Mounting Style
    Screw Mount
    Type
    High Speed Switching
    Product Type
    Discrete Semiconductor Modules
    Configuration
    Single
    Package/Case
    SOT-227 -4
    Product Category
    Discrete Semiconductor Modules
    Packaging
    Tube
    RoHS
    Details
    Brand
    SemiQ
    Product
    Power MOSFET Modules
    Factory Pack Quantity Factory Pack Quantity
    10
    Subcategory
    Discrete Semiconductor Modules
    Pd - Power Dissipation
    142 W
    Vr - Reverse Voltage
    1.2 kV
    Vf - Forward Voltage
    3.8 V at 10 A
    Typical Turn-Off Delay Time
    15 ns