1 pcs : BSM180D12P2C101 - Discrete Semiconductor Modules Mod: 1200V 180A (no Diode)
    • 1 pcs : BSM180D12P2C101 - Discrete Semiconductor Modules Mod: 1200V 180A (no Diode)

    1 pcs : BSM180D12P2C101 - Discrete Semiconductor Modules Mod: 1200V 180A (no Diode)

    electronicparts-UK/M/755-BSM180D12P2C101
    £868.46
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    Silicon Carbide (SiC) Power Devices ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. ROHM SiC Power Devices also allow designers to use fewer components, further reducing design complexity.
    Product Details
    electronicparts-UK/M/755-BSM180D12P2C101
    BSM180D12P2C101
    10 Items

    Data sheet

    Manufacturer
    ROHM SEMICONDUCTOR
    Series
    BSMx
    Maximum Operating Temperature
    + 150 C
    Minimum Operating Temperature
    - 40 C
    Mounting Style
    Screw Mount
    Type
    SiC Power Module
    Product Type
    Discrete Semiconductor Modules
    Configuration
    Half-Bridge
    Package/Case
    Module
    Product Category
    Discrete Semiconductor Modules
    Packaging
    Bulk
    RoHS
    Details
    Brand
    ROHM Semiconductor
    Product
    Power MOSFET Modules
    Factory Pack Quantity Factory Pack Quantity
    12
    Subcategory
    Discrete Semiconductor Modules
    Pd - Power Dissipation
    175 W
    Vr - Reverse Voltage
    1.2 kV
    Typical Turn-Off Delay Time
    300 ns