MURT400x Silicon Super Fast Recovery Diodes GeneSiC Semiconductor MURT400x silicon super fast recovery diodes provide high surge capability and repetitive peak reverse voltage of up to 600V. GeneSiC MURT400x silicon super fast recovery diodes come in a three tower package and feature continuous forward current of 400A. These GeneSiC Semiconductor silicon super fast recovery diodes provide an operating temperature of -40ºC to +175°C.