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    1 pcs : BSM300D12P3E005 - Discrete Semiconductor Modules SIC Pwr Module Half Bridge
    • 1 pcs : BSM300D12P3E005 - Discrete Semiconductor Modules SIC Pwr Module Half Bridge

    1 pcs : BSM300D12P3E005 - Discrete Semiconductor Modules SIC Pwr Module Half Bridge

    electronicparts-UK/M/755-BSM300D12P3E005
    £2,281.48
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    Silicon Carbide (SiC) Power Devices ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. ROHM SiC Power Devices also allow designers to use fewer components, further reducing design complexity.
    Product Details
    ROHM SEMICONDUCTOR
    electronicparts-UK/M/755-BSM300D12P3E005
    BSM300D12P3E005
    10 Items

    Data sheet

    Manufacturer
    ROHM SEMICONDUCTOR
    Maximum Operating Temperature
    + 150 C
    Minimum Operating Temperature
    - 40 C
    Mounting Style
    Screw Mount
    Type
    SiC Power Module
    Product Type
    Discrete Semiconductor Modules
    Configuration
    Half-Bridge
    Product Category
    Discrete Semiconductor Modules
    Packaging
    Bulk
    RoHS
    Details
    Brand
    ROHM Semiconductor
    Product
    Power MOSFET Modules
    Factory Pack Quantity Factory Pack Quantity
    4
    Subcategory
    Discrete Semiconductor Modules
    Pd - Power Dissipation
    1.26 kW
    Vr - Reverse Voltage
    1.2 kV
    Vf - Forward Voltage
    1.6 V
    Typical Turn-Off Delay Time
    210 ns