1 pcs : A2F12M12W2-F1 - Discrete Semiconductor Modules ACEPACK 2 power module, fourpack topology, 1200 V, 13 mOhm typ. SiC Power
    • 1 pcs : A2F12M12W2-F1 - Discrete Semiconductor Modules ACEPACK 2 power module, fourpack topology, 1200 V, 13 mOhm typ. SiC Power

    1 pcs : A2F12M12W2-F1 - Discrete Semiconductor Modules ACEPACK 2 power module, fourpack topology, 1200 V, 13 mOhm typ. SiC Power

    electronicparts-UK/M/511-A2F12M12W2-F1
    £412.92
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    ACEPACK 2 Power Modules STMicroelectronics ACEPACK 2 Power Modules are 1200V modules that integrate SiC power MOSFET technology. These power modules support the properties of the wide-bandgap SiC material and a high-thermal-performance substrate. The A2F12M12W2-F1 module features a 4-pack topology and the A2U12M12W2-F2 module features a 3-level topology. The ACEEPACK 2 modules offer low on-resistance per unit area and good switching performance that is virtually independent of temperature. The power modules operate on a 13mΩ typical RDS(on), 75A drain current (ID), 175°C maximum junction temperature(TJ), and 2.5kVrms voltage insulation. The ACEPACK 2 modules use press-fit contact pins and are used in DC/DC converters.
    Product Details
    electronicparts-UK/M/511-A2F12M12W2-F1
    A2F12M12W2-F1
    10 Items

    Data sheet

    Manufacturer
    STMicroelectronics
    Maximum Operating Temperature
    + 150 C
    Minimum Operating Temperature
    - 40 C
    Mounting Style
    Press Fit
    Type
    Full Bridge
    Product Type
    Discrete Semiconductor Modules
    Product Category
    Discrete Semiconductor Modules
    Packaging
    Tray
    RoHS
    Details
    Brand
    STMicroelectronics
    Product
    IGBT Silicon Carbide Modules
    Factory Pack Quantity Factory Pack Quantity
    18
    Subcategory
    Discrete Semiconductor Modules
    Vr - Reverse Voltage
    1.2 kV