1 pcs : MSCSM120DDUM31CTBL2NG - Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-BL2
    • 1 pcs : MSCSM120DDUM31CTBL2NG - Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-BL2

    1 pcs : MSCSM120DDUM31CTBL2NG - Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-BL2

    electronicparts-UK/M/579-120DDUM31CTBL2NG
    £545.10
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    MSCSM120x MOSFET Power Modules Microchip Technology MSCSM120x MOSFET Power Modules are high-efficiency converters that feature Si3N4 substrate with thick copper for improved thermal performance. These modules offer a low profile, direct mounting to the heatsink (isolated package), an internal thermistor for temperature monitoring, and an extended temperature range. The MSCSM120x modules operate at 1.2kV reverse voltage (VR), -10V to 25V gate-source voltage range (VGS), 310W/560W power dissipation (PD), and 79A/150A continuous drain current (ID). These modules are used in applications such as high-reliability power systems, high-efficiency AC/DC and DC/AC converters, motor control, and AC switches.
    Product Details
    electronicparts-UK/M/579-120DDUM31CTBL2NG
    MSCSM120DDUM31CTBL2NG
    10 Items

    Data sheet

    Manufacturer
    Microchip
    Maximum Operating Temperature
    + 175 C
    Minimum Operating Temperature
    - 55 C
    Mounting Style
    Screw Mount
    Type
    Double Dual Common Source SiC MOSFET Power Module
    Product Type
    Discrete Semiconductor Modules
    Configuration
    Double Dual Common Source
    Product Category
    Discrete Semiconductor Modules
    RoHS
    Details
    Brand
    Microchip Technology
    Product
    Power MOSFET Modules
    Factory Pack Quantity Factory Pack Quantity
    1
    Subcategory
    Discrete Semiconductor Modules
    Pd - Power Dissipation
    310 W
    Vr - Reverse Voltage
    1.2 kV
    Vf - Forward Voltage
    1.5 V at 30 A
    Typical Turn-Off Delay Time
    50 ns