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    1 pcs : F3L11MR12W2M1B74BOMA1 - Discrete Semiconductor Modules LOW POWER EASY
    • 1 pcs : F3L11MR12W2M1B74BOMA1 - Discrete Semiconductor Modules LOW POWER EASY

    1 pcs : F3L11MR12W2M1B74BOMA1 - Discrete Semiconductor Modules LOW POWER EASY

    electronicparts-UK/M/726-F3L11MR12W2M1B74
    £340.03
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    1200V CoolSiC™ Modules Infineon Technologies 1200V CoolSiC™ Modules are Silicon Carbide (SiC) MOSFET modules that offer good levels of efficiency and system flexibility. These modules come with Near Threshold Circuits (NTC) and PressFIT contact technology. The CoolSiC modules feature high current density, best in class switching and conduction losses, and low inductive design. These modules provide high-frequency operation, increased power density, and optimized development cycle time and cost.
    Product Details
    INFINEON TECHNOLOGIES
    electronicparts-UK/M/726-F3L11MR12W2M1B74
    F3L11MR12W2M1B74BOMA1
    10 Items

    Data sheet

    Manufacturer
    Infineon
    Maximum Operating Temperature
    + 150 C
    Minimum Operating Temperature
    - 40 C
    Mounting Style
    Press Fit
    Type
    CoolSiC MOSFET
    Product Type
    Discrete Semiconductor Modules
    Configuration
    3-Phase
    Package/Case
    Module
    Product Category
    Discrete Semiconductor Modules
    Packaging
    Tray
    Brand
    Infineon Technologies
    Product
    IGBT Silicon Carbide Modules
    Factory Pack Quantity Factory Pack Quantity
    15
    Subcategory
    Discrete Semiconductor Modules
    Part # Aliases
    F3L11MR12W2M1_B74 SP005408206
    Pd - Power Dissipation
    20 mW (1/50 W)
    Vr - Reverse Voltage
    1.2 kV
    Vf - Forward Voltage
    4.6 V
    Typical Turn-Off Delay Time
    82.9 ns