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    1 pcs : BSM180D12P2E002 - Discrete Semiconductor Modules 1200V, 204A, Half bridge, Silicon-carbide (SiC) Power Module
    • 1 pcs : BSM180D12P2E002 - Discrete Semiconductor Modules 1200V, 204A, Half bridge, Silicon-carbide (SiC) Power Module

    1 pcs : BSM180D12P2E002 - Discrete Semiconductor Modules 1200V, 204A, Half bridge, Silicon-carbide (SiC) Power Module

    electronicparts-UK/M/755-BSM180D12P2E002
    £1,181.71
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    SiC Power Modules ROHM Semiconductor SiC power modules are half-bridge SiC modules that integrate a SiC MOSFET and SiC SBD into a single package. These ROHM modules support high-frequency operation through reduced switching loss. The optimized design reduces stray inductance compared to existing solutions. And to prevent excessive heat generation, E Type models that integrate an additional thermistor are offered.
    Product Details
    ROHM SEMICONDUCTOR
    electronicparts-UK/M/755-BSM180D12P2E002
    BSM180D12P2E002
    10 Items

    Data sheet

    Manufacturer
    ROHM SEMICONDUCTOR
    Maximum Operating Temperature
    + 150 C
    Minimum Operating Temperature
    - 40 C
    Mounting Style
    Screw Mount
    Type
    SiC Power Module
    Product Type
    Discrete Semiconductor Modules
    Package/Case
    Module
    Product Category
    Discrete Semiconductor Modules
    RoHS
    Details
    Brand
    ROHM Semiconductor
    Product
    Power MOSFET Modules
    Factory Pack Quantity Factory Pack Quantity
    4
    Subcategory
    Discrete Semiconductor Modules
    Pd - Power Dissipation
    1.36 kW
    Vr - Reverse Voltage
    1.2 kV
    Typical Turn-Off Delay Time
    125 ns