1 pcs : NXH40B120MNQ1SNG - Discrete Semiconductor Modules 30KW Q1BOOST FULL SIC
    • 1 pcs : NXH40B120MNQ1SNG - Discrete Semiconductor Modules 30KW Q1BOOST FULL SIC

    1 pcs : NXH40B120MNQ1SNG - Discrete Semiconductor Modules 30KW Q1BOOST FULL SIC

    electronicparts-UK/M/863-NXH40B120MNQ1SNG
    ONSEMI
    £315.31
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    NXH40B120MNQ1 Full SiC MOSFET Module onsemi NXH40B120MNQ1 Full SiC MOSFET Module contains a dual full SiC boost stage consisting of three 40mΩ/1200V SiC MOSFETs and three 40A/1200V SiC diodes. This SiC MOSFET module includes three additional 50A/1200V bypass rectifiers for the inrush current limit. The NXH40B120MNQ1 module features low reverse recovery, fast switching SiC diodes, a low inductive layout, solderable pins, a thermistor, is Pb-free, halogen-free, BFR-free, and is RoHS compliant. This SiC MOSFET module is ideally used in solar inverters and uninterruptable power supplies.
    Product Details
    ONSEMI
    electronicparts-UK/M/863-NXH40B120MNQ1SNG
    NXH40B120MNQ1SNG
    10 Items

    Data sheet

    Manufacturer
    ONSEMI
    Series
    NXH40B120MNQ1
    Maximum Operating Temperature
    + 150 C
    Minimum Operating Temperature
    - 40 C
    Product Type
    Discrete Semiconductor Modules
    Configuration
    Dual
    Product Category
    Discrete Semiconductor Modules
    Packaging
    Tray
    RoHS
    Details
    Brand
    onsemi
    Product
    IGBT Silicon Carbide Modules
    Factory Pack Quantity Factory Pack Quantity
    21
    Subcategory
    Discrete Semiconductor Modules
    Pd - Power Dissipation
    156 W