BYV10D-600P Ultrafast Power Diode WeEn Semiconductors BYV10D-600P Ultrafast Power Diode offers a low thermal resistance in a TO-252 (DPAK) plastic package. The BYV10D-600P Ultrafast Power Diode features a low forward voltage drop, low reverse recovery current, and low leakage current. The WeEn Semi BYV10D-600P Diode has a 600V repetitive peak reverse voltage and a junction temperature of 175°C.