1 pcs : RFN10BGE3STL - Diodes - General Purpose, Power, Switching SUPER FAST RECOVERY,SWITCHING
    • 1 pcs : RFN10BGE3STL - Diodes - General Purpose, Power, Switching SUPER FAST RECOVERY,SWITCHING

    1 pcs : RFN10BGE3STL - Diodes - General Purpose, Power, Switching SUPER FAST RECOVERY,SWITCHING

    electronicparts-UK/M/755-RFN10BGE3STL
    £9.58
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    RFN10BGE3STL Super Fast Recovery Diode ROHM Semiconductor RFN10BGE3STL Super Fast Recovery Diode features silicon epitaxial planar construction with high current overload capacity and low switching loss. This superfast recovery diode is stored at -55°C to 150°C temperature range and offers 350V repetitive peak reverse voltage. The RFN10BGE3STL diode functions at 10A average rectified forward current, 1.5V maximum forward voltage, 10μA maximum reverse current, and 150°C junction temperature. This diode is ideal for use in general rectification.
    Product Details
    electronicparts-UK/M/755-RFN10BGE3STL
    RFN10BGE3STL
    10 Items

    Data sheet

    Manufacturer
    ROHM SEMICONDUCTOR
    Maximum Operating Temperature
    + 150 C
    Minimum Operating Temperature
    - 55 C
    Mounting Style
    SMD/SMT
    Product Type
    Diodes - General Purpose, Power, Switching
    Configuration
    Common Cathode
    Package/Case
    TO-252-3
    Product Category
    Diodes - General Purpose, Power, Switching
    Packaging
    Cut Tape
    RoHS
    Details
    Brand
    ROHM Semiconductor
    Product
    General Purpose Diodes
    Factory Pack Quantity Factory Pack Quantity
    2500
    Subcategory
    Diodes & Rectifiers
    Part # Aliases
    RFN10BGE3S
    REACH - SVHC
    Details
    If - Forward Current
    10 A
    Vf - Forward Voltage
    1.25 V
    Max Surge Current
    80 A
    Ir - Reverse Current
    10 uA
    Recovery Time
    22 ns