1 pcs : RFUH25TB3SNZC9 - Diodes - General Purpose, Power, Switching RFUH25TB3SNZ is an ultra low switching loss fast recovery di
    • 1 pcs : RFUH25TB3SNZC9 - Diodes - General Purpose, Power, Switching RFUH25TB3SNZ is an ultra low switching loss fast recovery di

    1 pcs : RFUH25TB3SNZC9 - Diodes - General Purpose, Power, Switching RFUH25TB3SNZ is an ultra low switching loss fast recovery di

    electronicparts-UK/M/755-RFUH25TB3SNZC9
    £9.79
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    RFUH25TB3SNZ Super Fast Recovery Diode ROHM Semiconductor RFUH25TB3SNZ Super Fast Recovery Diode features ultra-low switching loss and high current overload capacity. This recovery diode includes silicon epitaxial planar type construction. The RFUH25TB3SNZ recovery diode offers 350V repetitive peak reverse voltage, 10μA reverse current, and 100A non-repetitive forward surge current. This recovery diode operates at 1.45V maximum forward voltage and stored at -55°C to 150°C temperature range. The RFUH25TB3SNZ super-fast recovery diode is ideal for use in general rectification.
    Product Details
    electronicparts-UK/M/755-RFUH25TB3SNZC9
    RFUH25TB3SNZC9
    10 Items

    Data sheet

    Manufacturer
    ROHM SEMICONDUCTOR
    Maximum Operating Temperature
    + 150 C
    Minimum Operating Temperature
    - 55 C
    Mounting Style
    Through Hole
    Product Type
    Diodes - General Purpose, Power, Switching
    Configuration
    Single
    Product Category
    Diodes - General Purpose, Power, Switching
    Packaging
    Tube
    RoHS
    Details
    Brand
    ROHM Semiconductor
    Product
    General Purpose Diodes
    Factory Pack Quantity Factory Pack Quantity
    50
    Subcategory
    Diodes & Rectifiers
    Part # Aliases
    RFUH25TB3SNZ
    If - Forward Current
    20 A
    Vf - Forward Voltage
    1.25 V
    Max Surge Current
    100 A
    Ir - Reverse Current
    10 uA
    Recovery Time
    18 ns