10 pcs : RN2106MFV,L3XHF(CT - Digital Transistors AUTO AEC-Q PNP Q1BSR4.7kO, Q1BER47kO, VCEO-50V, IC-0.1A (SOT-723)
    • 10 pcs : RN2106MFV,L3XHF(CT - Digital Transistors AUTO AEC-Q PNP Q1BSR4.7kO, Q1BER47kO, VCEO-50V, IC-0.1A (SOT-723)

    10 pcs : RN2106MFV,L3XHF(CT - Digital Transistors AUTO AEC-Q PNP Q1BSR4.7kO, Q1BER47kO, VCEO-50V, IC-0.1A (SOT-723)

    10electronicpartsUK757RN2106MFVL3XHFCT
    TOSHIBA
    10 pcs : RN2106MFV,L3XHF(CT - Digital Transistors AUTO AEC-Q PNP Q1BSR=4.7kO, Q1BER=47kO, VCEO=-50V, IC=-0.1A (SOT-723)
    £22.52
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    RN Automotive Bias Resistor Built-in Transistors Toshiba RN Automotive Bias Resistor Built-in Transistors (BRT) are AEC-Q101 qualified and optimized for switching, inverter circuit, interfacing, and driver circuit applications. The bias resistor is integrated, reducing the number of external parts required and decreasing system size and assembly time. The Toshiba RN Automotive Bias Resistor BRTs provide a wide resistance range to adjust to various circuit designs.
    Product Details
    TOSHIBA
    10electronicpartsUK757RN2106MFVL3XHFCT
    RN2106MFV,L3XHF(CT
    10 Items

    Data sheet

    Manufacturer
    TOSHIBA
    Maximum Operating Temperature
    + 150 C
    Minimum Operating Temperature
    - 65 C
    Mounting Style
    SMD/SMT
    Product Type
    Diodes - General Purpose, Power, Switching
    Package/Case
    SOT-143-4
    Product Category
    Diodes - General Purpose, Power, Switching
    Packaging
    MouseReel
    RoHS
    Details
    Brand
    Diodes Incorporated
    Factory Pack Quantity Factory Pack Quantity
    10000
    Subcategory
    Diodes & Rectifiers
    Unit Weight
    90 g
    Qualification
    AEC-Q101
    Pd - Power Dissipation
    250 mW
    If - Forward Current
    215 mA
    Vf - Forward Voltage
    1.25 V
    Max Surge Current
    4 A
    Ir - Reverse Current
    1 uA
    Recovery Time
    4 ns