10 pcs : HN1C01FE-Y,LXHF - Bipolar Transistors - BJT AUTO AEC-Q NPN + NPN Tr VCEO:50V Ic:0.15A hFE:120-400 SOT-563 (ES6)
    • 10 pcs : HN1C01FE-Y,LXHF - Bipolar Transistors - BJT AUTO AEC-Q NPN + NPN Tr VCEO:50V Ic:0.15A hFE:120-400 SOT-563 (ES6)

    10 pcs : HN1C01FE-Y,LXHF - Bipolar Transistors - BJT AUTO AEC-Q NPN + NPN Tr VCEO:50V Ic:0.15A hFE:120-400 SOT-563 (ES6)

    10electronicpartsUK757HN1C01FEYLXHF
    TOSHIBA
    10 pcs : HN1C01FE-Y,LXHF - Bipolar Transistors - BJT AUTO AEC-Q NPN + NPN Tr VCEO:50V Ic:0.15A hFE:120-400 SOT-563 (ES6)
    £23.64
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    HN1x Bipolar Transistors Toshiba HN1x Bipolar Transistors are AEC-Q101 qualified and optimized for low-frequency amplifier applications. The HN1x Bipolar Transistors feature high voltage, high collector current, and an excellent hFE linearity. The devices are offered in a small SOT-363 (US6) package.
    Product Details
    TOSHIBA
    10electronicpartsUK757HN1C01FEYLXHF
    HN1C01FE-Y,LXHF
    10 Items

    Data sheet

    Manufacturer
    TOSHIBA
    Width
    1.6 mm
    Height
    1 mm
    Length
    2.9 mm
    Series
    BAS21
    Maximum Operating Temperature
    + 150 C
    Minimum Operating Temperature
    - 65 C
    Mounting Style
    SMD/SMT
    Product Type
    Diodes - General Purpose, Power, Switching
    Package/Case
    SC-74-6
    Product Category
    Diodes - General Purpose, Power, Switching
    Packaging
    MouseReel
    RoHS
    Details
    Brand
    Infineon Technologies
    Factory Pack Quantity Factory Pack Quantity
    3000
    Subcategory
    Diodes & Rectifiers
    Unit Weight
    12.210 mg
    Qualification
    AEC-Q101
    Part # Aliases
    SP000012610 BAS21UE6327XT BAS21UE6327HTSA1
    Pd - Power Dissipation
    250 mW
    If - Forward Current
    250 mA
    Vf - Forward Voltage
    1.25 V
    Max Surge Current
    4 A
    Ir - Reverse Current
    100 uA
    Recovery Time
    50 ns