10 pcs : HN1B04FU-GR,LXHF - Bipolar Transistors - BJT AUTO AEC-Q PNP + NPN Tr VCEO:-50V Ic:-0.15A hFE:200-400 SOT-363 (US6)
    • 10 pcs : HN1B04FU-GR,LXHF - Bipolar Transistors - BJT AUTO AEC-Q PNP + NPN Tr VCEO:-50V Ic:-0.15A hFE:200-400 SOT-363 (US6)

    10 pcs : HN1B04FU-GR,LXHF - Bipolar Transistors - BJT AUTO AEC-Q PNP + NPN Tr VCEO:-50V Ic:-0.15A hFE:200-400 SOT-363 (US6)

    10electronicpartsUK757HN1B04FUGRLXHF
    TOSHIBA
    10 pcs : HN1B04FU-GR,LXHF - Bipolar Transistors - BJT AUTO AEC-Q PNP + NPN Tr VCEO:-50V Ic:-0.15A hFE:200-400 SOT-363 (US6)
    £24.48
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    HN1x Bipolar Transistors Toshiba HN1x Bipolar Transistors are AEC-Q101 qualified and optimized for low-frequency amplifier applications. The HN1x Bipolar Transistors feature high voltage, high collector current, and an excellent hFE linearity. The devices are offered in a small SOT-363 (US6) package.
    Product Details
    TOSHIBA
    10electronicpartsUK757HN1B04FUGRLXHF
    HN1B04FU-GR,LXHF
    10 Items

    Data sheet

    Manufacturer
    TOSHIBA
    Series
    1SS370
    Maximum Operating Temperature
    + 125 C
    Minimum Operating Temperature
    - 55 C
    Mounting Style
    SMD/SMT
    Product Type
    Diodes - General Purpose, Power, Switching
    Package/Case
    SOT-323-3
    Product Category
    Diodes - General Purpose, Power, Switching
    Packaging
    MouseReel
    RoHS
    Details
    Brand
    Toshiba
    Factory Pack Quantity Factory Pack Quantity
    3000
    Subcategory
    Diodes & Rectifiers
    Unit Weight
    5 mg
    Pd - Power Dissipation
    100 mW
    If - Forward Current
    100 mA
    Vf - Forward Voltage
    900 mV
    Max Surge Current
    2 A
    Ir - Reverse Current
    1 uA
    Recovery Time
    10 ns