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    10 pcs : HN1B04FE-GR,LXHF - Bipolar Transistors - BJT AUTO AEC-Q PNP + NPN Tr VCEO:-50V Ic:-0.15A hFE:200-400 SOT-563 (ES6)
    • 10 pcs : HN1B04FE-GR,LXHF - Bipolar Transistors - BJT AUTO AEC-Q PNP + NPN Tr VCEO:-50V Ic:-0.15A hFE:200-400 SOT-563 (ES6)

    10 pcs : HN1B04FE-GR,LXHF - Bipolar Transistors - BJT AUTO AEC-Q PNP + NPN Tr VCEO:-50V Ic:-0.15A hFE:200-400 SOT-563 (ES6)

    10electronicpartsUK757HN1B04FEGRLXHF
    TOSHIBA
    10 pcs : HN1B04FE-GR,LXHF - Bipolar Transistors - BJT AUTO AEC-Q PNP + NPN Tr VCEO:-50V Ic:-0.15A hFE:200-400 SOT-563 (ES6)
    £25.32
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    HN1x Bipolar Transistors Toshiba HN1x Bipolar Transistors are AEC-Q101 qualified and optimized for low-frequency amplifier applications. The HN1x Bipolar Transistors feature high voltage, high collector current, and an excellent hFE linearity. The devices are offered in a small SOT-363 (US6) package.
    Product Details
    TOSHIBA
    10electronicpartsUK757HN1B04FEGRLXHF
    HN1B04FE-GR,LXHF
    10 Items

    Data sheet

    Manufacturer
    TOSHIBA
    Width
    0.6 mm
    Height
    0.47 mm
    Length
    1 mm
    Series
    DDTA144
    Maximum Operating Temperature
    + 150 C
    Minimum Operating Temperature
    - 55 C
    Mounting Style
    SMD/SMT
    Product Type
    Digital Transistors
    Package/Case
    DFN-1006-3
    Product Category
    Digital Transistors
    Packaging
    MouseReel
    RoHS
    Details
    Brand
    Diodes Incorporated
    Factory Pack Quantity Factory Pack Quantity
    3000
    Subcategory
    Transistors
    Unit Weight
    2.700 g
    Pd - Power Dissipation
    250 mW