1 pcs : MMBT5551W_R1_00701 - Bipolar Transistors - BJT NPN HIGH VOLTAGE TRANSISTOR
    • 1 pcs : MMBT5551W_R1_00701 - Bipolar Transistors - BJT NPN HIGH VOLTAGE TRANSISTOR

    1 pcs : MMBT5551W_R1_00701 - Bipolar Transistors - BJT NPN HIGH VOLTAGE TRANSISTOR

    Allparts-UK/M/241-MMBT5551WR100701
    Panjit
    £10.01
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    MMBT5551W NPN Silicon High-Voltage Transistors PANJIT MMBT5551W NPN Silicon High-Voltage Transistors offer a collector-emitter voltage (VCE) of 160V and a collector current (IC) rating of 600mA. The PANJIT MMBT5551W is suitable for a wide range of electronic applications. This transistor is environmentally friendly, lead-free, and complies with EU RoHS 2.0 regulations. Additionally, it features a green molding compound that meets the IEC 61249 standard.
    Product Details
    Panjit
    Allparts-UK/M/241-MMBT5551WR100701
    MMBT5551W_R1_00701
    10 Items

    Data sheet

    Manufacturer
    Panjit
    Maximum Operating Temperature
    + 150 C
    Minimum Operating Temperature
    - 55 C
    Mounting Style
    SMD/SMT
    Product Type
    BJTs - Bipolar Transistors
    Package/Case
    SOT-323-3
    Product Category
    Bipolar Transistors - BJT
    Packaging
    MouseReel
    RoHS
    Details
    Brand
    Panjit
    Factory Pack Quantity Factory Pack Quantity
    3000
    Subcategory
    Transistors
    Unit Weight
    5 mg
    Pd - Power Dissipation
    200 mW