1 pcs : NSVMSD1819A-RT1G - Bipolar Transistors - BJT NPN Bipolar Transistor
    • 1 pcs : NSVMSD1819A-RT1G - Bipolar Transistors - BJT NPN Bipolar Transistor

    1 pcs : NSVMSD1819A-RT1G - Bipolar Transistors - BJT NPN Bipolar Transistor

    Allparts-UK/M/863-NSVMSD1819A-RT1G
    ONSEMI
    £6.83
    Delivery: 4-7 business days
    Quantity
    10 Items

    Description
    MSD1819A-R General Purpose & Low VCE Transistor onsemi MSD1819A-R General Purpose and Low VCE Transistor is designed for amplifier applications. This NPN transistor features a high current gain (hFE) from 210 to 460 and a low VCE <,0.5V. The NPN transistor comes in the SC-70/SOT-323 package, designed for low-power surface mount applications. The silicon epitaxial planar transistor is AEC-Q101 qualified and PPAP capable. This low VCE transistor is Pb and halogen/BFR-free. Typical applications include reverse battery protection, DC-DC converter output driver, and high-speed switching.
    Product Details
    ONSEMI
    Allparts-UK/M/863-NSVMSD1819A-RT1G
    NSVMSD1819A-RT1G
    10 Items

    Data sheet

    Manufacturer
    ONSEMI
    Series
    MSD1819A-R
    Maximum Operating Temperature
    + 150 C
    Mounting Style
    SMD/SMT
    Product Type
    BJTs - Bipolar Transistors
    Configuration
    Single
    Package/Case
    SC-70-3
    Product Category
    Bipolar Transistors - BJT
    Packaging
    Cut Tape
    Brand
    onsemi
    Factory Pack Quantity Factory Pack Quantity
    3000
    Subcategory
    Transistors
    Pd - Power Dissipation
    150 mW